NT5TU64M8DE Datasheet - Nanya

NT5TU64M8DE 512Mb DDR2 SDRAM

The 512Mbit Double-Data-Rate-2 (DDR2) DRAMs is a high-speed CMOS Double Data Rate 2 SDRAM containing 536,870,912 bits. It is internally configured as a quad-bank DRAM. The 512Mb chip is organized as 16Mbit x 8 I/O x 4 bank or 8Mbit x 16 I/O x 4 bank device. These synchronous devices achieve high spe.

NT5TU64M8DE Features

* (1) posted CAS with additive latency, (2) write latency = read latency -1, (3) normal and weak strength data-output driver, (4) variable data-output impedance adjustment and (5) an ODT (On-Die Termination) function. All of the control and address inputs are synchronized with a pair of externally su

NT5TU64M8DE Datasheet (2.35 MB)