J300 Datasheet | National Semiconductor

Description The J300 N-channel JFET is designed for VHF/UHF mon-source or mon-gate amplifier, oscillator and mixer applications. Absolute Maximum Ratings (25°o Gate-Drain or Gate-Source Voltage Gate Current Total Device Dissipation (25° C Free-Air Temperature) Power Derating (to +125°C) Storage Temperature Range Operating Temperature Range Lead Temperature (1/16" from case for 10 seconds) - 25V 10 m A 350 m W 3.5 m W/°C -55°C to+150°C -55°C to+150°C 300° C Process 90 0.175 0.185 [4.445-4.699] LEADSTOHTINT0 0.016 0.019 (0~406-0.4B37~ D1AH0LE (TVPI ~ 0.594 (15.088) ._ I. 045-0-055 "(1.143-T397) 0.045-0.055 "~ (1.143-1.397) 0.085-0.095 (2"lsi TT4"l3i PIN FET 0.045-0.055 Oi43-!.397) Electrical Characteristics (25c unless oth erwise noted) PARAMETER IGSS Gate Reverse Current VGS(off) Gate-Source Cutoff Voltage BVqs S Gate-Source Breakdown Voltage IDSS Saturation Drain Current ^GS(f) Gate-Source Forward Voltage mon-Source Forward Transconductance, (Note 2) mon-Source Output Transconductance mon-Source Input Capacitance mon-Source Reverse Transfer Capacitance mon-Source Output Capacitance CONDITIONS V G S=-15V, V DS «0, (Note 1) V DS = 10V, Dl = 1 n A VDS ' 0, IQ = - I u A V DS = 10V, Vqs=0, (Note 2) Gl = 1 m A, V DS = Vd G = 10V, Dl = 5 m...