Description
NV6169 1..
This GaNFast™ power IC integrates a high performance eMode GaN FET with integrated gate drive to achieve unprecedented high-frequency and high efficie.
Features
* GaNFast™ Power IC
* Monolithically-integrated gate drive
* Wide VCC range (9 to 30 V)
* Programmable turn-on dV/dt
* 200 V/ns dV/dt immunity
* 800 V Transient Voltage Rating
* 650 V Continuous Voltage Rating
* Low 45 mΩ resistance
* Zer
Applications
* AC-DC, DC-DC
* ACF, Buck, Boost, Half Bridge, Full Bridge, LLC resonant,
Class D, PFC, Motor Drive
* TV SMPS