MSF1422B
New Japan Radio
52.42kb
Miscellaneous.
TAGS
📁 Related Datasheet
MSF1421B - Miscellaneous
(New Japan Radio)
m MSF1421B o X-Band Magnetron .c U for the magnetron of x-band radar system. MSF1421B is designed 4 t is fixed <9380-9440MHz> and the peak output The .
MSF1421C - Miscellaneous
(New Japan Radio)
w
w
a D . w
S a t
e e h
U 4 t
m o .c
w
w
w
t a .D
S a
e h
U 4 t e
.c
m o
w
w
w
.D
a
S a t
e e h
U 4 t
m o .c
.
MSF1425A - Miscellaneous
(New Japan Radio)
w
w
a D . w
S a t
e e h
U 4 t
m o .c
w
w
w
t a .D
S a
e h
U 4 t e
.c
m o
w
w
w
.D
a
S a t
e e h
U 4 t
m o .c
.
MSF1425B - Miscellaneous
(New Japan Radio)
m MSF1425B o X-Band Magnetron .c U for the magnetron of x-band radar system. MSF1425B is designed 4 t is fixed <9380-9440MHz> and the peak output The .
MSF14027AI - (MSF-xxxx) Surface Acoustic Wave Filters
(Shindengen Electric)
w
w
a D . w
S a t
e e h
U 4 t
m o .c
w
w
w
.D
t a
S a
e h
U 4 t e
m o .c
w
w
w
.D
at
h S a
t e e
4U
.
m o c
.
MSF10065V1 - Silicon Carbide Diode
(Maple Semiconductor)
MSF10065V1
MSF10065V1 650V Silicon Carbide Diode
Features
-650-Volt Schottky Rectifier -Shorter recovery time -High-speed switching possible -High-Fr.
MSF10120V1 - Silicon Carbide Diode
(Maple Semiconductor)
MSF10120V1
MSF10120V1 1200V Silicon Carbide Diode
Features
-1200-Volt Schottky Rectifier -Shorter recovery time -High-speed switching possible -High.
MSF10N40 - 400V N-Channel MOSFET
(Bruckewell)
MSF10N40
400V N-Channel MOSFET
Description The MSF10N40 is a N-channel enhancement-mode MOSFET , providing the designer with the best bination of f.
MSF10N60 - 600V N-Channel MOSFET
(Bruckewell)
MSF10N60
600V N-Channel MOSFET
Description The MSF10N60 is a N-channel enhancement-mode MOSFET , providing the designer with the best bination of f.
MSF10N65 - 650V N-Channel MOSFET
(Bruckewell)
MSF10N65
650V N-Channel MOSFET
Description The MSF10N65 is a N-channel enhancement-mode MOSFET , providing the designer with the best bination of f.
