2N2297
New Jersey Semi-Conductor
53.75kb
Npn silicon transistor.
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📁 Related Datasheet
2N2290 - PNP GERMANIUM POWER SWITCHING TRANSISTORS
(Motorola)
2N2288,2N2289 (GERMANIUM) 2N2290
PNP GERMANIUM POWER SWITCHING TRANSISTORS
designed for fast·switching applications requiring low saturation volt.
2N2291 - PNP GERMANIUM POWER SWITCHING TRANSISTORS
(Motorola)
212291, 212292 (GERMANIUM) 212293
PNP GERMANIUM POWER SWITCHING TRANSISTORS
· .. designed for fast switching applications requiring low saturation vo.
2N2292 - PNP GERMANIUM POWER SWITCHING TRANSISTORS
(Motorola)
212291, 212292 (GERMANIUM) 212293
PNP GERMANIUM POWER SWITCHING TRANSISTORS
· .. designed for fast switching applications requiring low saturation vo.
2N2293 - PNP GERMANIUM POWER SWITCHING TRANSISTORS
(Motorola)
212291, 212292 (GERMANIUM) 212293
PNP GERMANIUM POWER SWITCHING TRANSISTORS
· .. designed for fast switching applications requiring low saturation vo.
2N2297 - AMPLIFIER TRANSISTOR
(Motorola)
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
—Collector Current Continuous
Total Device Dissipation (a.
2N2297 - Silicon Planar Epitaxial Transistor
(ETC)
.
2N2297 - SMALL SIGNAL TRANSISTORS
(Central Semiconductor)
Small Signal Transistors TO-39 Case (Continued)
TYPE NO. DESCRIPTION VCBO (V) VCEO (V) *VCER VEBO (V) ICBO @ (µA) *ICEO **ICES ***ICEV ****ICER MIN 7..
2N2205 - (2N2xxx) Small Signal Transistors
(ETC)
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2N2212 - PNP GERMANIUM POWER TRANSISTORS
(Motorola)
2N2212 (GERMANIUM)
PNP GERMANIUM POWER TRANSISTORS
· .. designed for high-current SllVitching applications requiring low saturation voltages. short S.
2N2218 - SILICON NPN TRANSISTOR
(Central Semiconductor)
2N2218 2N2218A
SILICON NPN TRANSISTORS
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DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N2218 and 2N2218A are silicon NPN.
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