2N3632
New Jersey Semi-Conductor
214.34kb
Rf & microwave transistors.
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📁 Related Datasheet
2N3630 - NPN Transistor
(SSDI)
5 AMP NPN
Sorted by IC, then VCEO
Part Number
mIaCx (A)
mVCaExO (V)
Ratings based on 25˚C case temperature unless otherwise specified
mhFiEn
mh.
2N3631 - n-channel MOSFET
(Siliconix)
depletion-type n-charlnel MOSFET
designed for • • •
• Small-Signal Amplifiers • Ultra-Higlh Input
Impedance Amplifiers
Electrometers Smoke detedors pH.
2N3632 - RF & MICROWAVE TRANSISTORS
(Microsemi Corporation)
.
2N3632 - NPN silicon RF Power transistors
(Motorola)
2N3375(SILlCON)\ 2N3553
2N3632 2N 3961
•CASE 79
(10·39)
2N3553
·'·CASE 24
(10·102)
2N3961
* Collector Connected
·CASE 36
(10·60)
to Case .. Col.
2N3634 - PNP SILICON AMPLIFIER TRANSISTOR
(Microsemi Corporation)
TECHNICAL DATA
PNP SILICON AMPLIFIER TRANSISTOR
Qualified per MIL-PRF-19500/357 Devices 2N3634 2N3634L 2N3635 2N3635L 2N3636 2N3636L 2N3637 2N3637L Qu.
2N3634 - PNP Transistor
(SEMICOA)
Type 2N3634
Geometry TBD Polarity PNP Qual Level: Pending
Features:
• General-purpose low-power amplifier transistor which operates over a wide temper.
2N3634 - SILICON PNP TRANSISTOR
(TT)
SILICON PNP TRANSISTOR
2N3634
• General Purpose PNP Silicon Transistor • High Voltage, High Speed Saturated Switching • Low Power Amplifier Applicatio.
2N3634 - HIGH VOLTAGE TRANSISTOR
(Motorola)
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage Emitter-Base Voltage
— Collector Current Continuous
@ Total Device Dissipation.
2N3634 - SILICON PNP TRANSISTORS
(Central Semiconductor)
2N3634 2N3635
SILICON PNP TRANSISTORS
w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3634 and 2N3635 are silicon PNP e.
2N3634 - Low Power Transistors
(ON Semiconductor)
2N3634, 2N3634L, 2N3635, 2N3635L, 2N3636, 2N3636L, 2N3637, 2N3637L
Low Power Transistors
PNP Silicon
Features
• MIL−PRF−19500/357 Qualified • Availa.
