10EDB60
Nihon Inter Electronics
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10EDB60 - GLASS PASSIVATED RECTIFIER
(Gulf Semiconductor)
..
10EDB60
GLASS PASSIVATED RECTIFIER
VOLTAGE: 600V CURRENT: 1.0A
FEATURE
Molded case feature for auto insertion High current capab.
10EDB60 - AXIAL LEADED SILICON RECTIFIER DIODES
(SUNMATE)
10EDB60
AXIAL LEADED SILICON RECTIFIER DIODES
VOLTAGE RANGE: 600V CURRENT: 1.0 A
Features
Miniature Size Low Forward Voltage drop Low Reverse L.
10EDB10 - DIODE
(Nihon Inter Electronics)
..
DIODE
FEATURES
Type :
10EDB10
1A 100V Tj =150 °C
OUTLINE DRAWING
* Miniature Size * Low Forward Voltage drop * Low Reverse L.
10EDB10 - AXIAL LEADED SILICON RECTIFIER DIODES
(SUNMATE)
10EDB10
AXIAL LEADED SILICON RECTIFIER DIODES
VOLTAGE RANGE: 100V
CURRENT: 1.0 A
Features
Miniature Size Low Forward Voltage drop Low Reverse L.
10EDB20 - DIODE
(Nihon Inter Electronics)
..
DIODE
FEATURES
Type :
10EDB20
1A 200V Tj =150 °C
OUTLINE DRAWING
* Miniature Size * Low Forward Voltage drop * Low Reverse L.
10EDB40 - DIODE
(Nihon Inter Electronics)
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DIODE
FEATURES
Type :
10EDB40
1A 400V Tj =150 °C
OUTLINE DRAWING
* Miniature Size * Low Forward Voltage drop * Low Reverse L.
10EDA10 - Standard Recovery Diode
(Nihon Inter Electronics)
1A Avg. 100 Volts Standard Recovery Diode 10EDA10
INSTANTANEOUS FORWARD CURRENT (A)
10 5
2 1 0.5
0.2 0.1
0
FORWARD CURRENT VS. VOLTAGE
10EDA10
Tj.
10EDA10 - AXIAL LEADED SILICON RECTIFIER DIODES
(SUNMATE)
10EDA10
AXIAL LEADED SILICON RECTIFIER DIODES
VOLTAGE RANGE: 100V
CURRENT: 1.0 A
Features
Miniature Size Low Forward Voltage drop Low Reverse L.
10EDA20 - Standard Recovery Diode
(Nihon Inter Electronics)
1A Avg. 200 Volts Standard Recovery Diode 10EDA20
INSTANTANEOUS FORWARD CURRENT (A)
10 5
2 1 0.5
0.2 0.1
0
FORWARD CURRENT VS. VOLTAGE
Tj=25˚∞CC Tj.
10EDA20 - SILICON RECTIFIER DIODE
(EIC)
.eicsemi.
10EDA20
SILICON RECTIFIER DIODE
PRV : 200 Volts Io : 1.0 Ampere
FEATURES :
* High current capability * High reliability * Low rever.