10ERB60
Nihon Inter Electronics
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Fred.
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10ERB10 - FRED
(Nihon Inter Electronics)
1A Avg.
100 Volts
FRED
10ERB10
INSTANTANEOUS FORWARD CU RRENT (A)
10 5
2 1 0.5
0.2 0.1
0
FORWA RD CURRENT VS. VOLTAGE
10ERB10
Tj=25°C Tj=150°C.
10ERB20 - FRD
(Nihon Inter)
1A 200V 60ns
OUTLINE DRAWING
FRD
Type :10ERB20 10ERB20
FEATURES
* Miniature Size * Fast Recovery and Low Price * High Surge Capability * 100volts .
10ERB40 - FRD
(Nihon Inter Electronics)
1A 400V 120ns
FRD Type :10ERB40
FEATURES
* Miniature Size * Fast Recovery and Low Price * High Surge Capability * 100volts trough 600volts Types Avail.
10ERA60 - FRD
(Nihon Inter Electronics)
FRD Type :10ERA60
FEATURES
* Miniature Size * Super Fast Recovery * Low Power Loss, High Efficiency * High Surge Capability * 26mm and 52mm Inside Tap.
10EDA10 - Standard Recovery Diode
(Nihon Inter Electronics)
1A Avg. 100 Volts Standard Recovery Diode 10EDA10
INSTANTANEOUS FORWARD CURRENT (A)
10 5
2 1 0.5
0.2 0.1
0
FORWARD CURRENT VS. VOLTAGE
10EDA10
Tj.
10EDA10 - AXIAL LEADED SILICON RECTIFIER DIODES
(SUNMATE)
10EDA10
AXIAL LEADED SILICON RECTIFIER DIODES
VOLTAGE RANGE: 100V
CURRENT: 1.0 A
Features
Miniature Size Low Forward Voltage drop Low Reverse L.
10EDA20 - Standard Recovery Diode
(Nihon Inter Electronics)
1A Avg. 200 Volts Standard Recovery Diode 10EDA20
INSTANTANEOUS FORWARD CURRENT (A)
10 5
2 1 0.5
0.2 0.1
0
FORWARD CURRENT VS. VOLTAGE
Tj=25˚∞CC Tj.
10EDA20 - SILICON RECTIFIER DIODE
(EIC)
.eicsemi.
10EDA20
SILICON RECTIFIER DIODE
PRV : 200 Volts Io : 1.0 Ampere
FEATURES :
* High current capability * High reliability * Low rever.
10EDA40 - Standard Recovery Diode
(Nihon Inter Electronics)
1A Avg. 400 Volts Standard Recovery Diode 10EDA40
INSTANTANEOUS FORWARD CURRENT (A)
10 5
2 1 0.5
0.2 0.1
0
FORWARD CURRENT VS. VOLTAGE
10EDA40
Tj.
10EDA40 - AXIAL LEADED SILICON RECTIFIER DIODES
(SUNMATE)
10EDA40
AXIAL LEADED SILICON RECTIFIER DIODES
VOLTAGE RANGE: 400V
CURRENT: 1.0 A
Features
Miniature Size Low Forward Voltage drop Low Reverse L.
