GSH10A10, Nihon Inter Electronics
10A Avg. 100 Volts SBD
GSH10A10
INSTANTANEOUS FORWARD CURRENT (A)
AVERAGE REVERSE POWER DISSIPATION (W)
50
20 10
5
2 1
0
FORWARD CURRENT VS. VOLT.
GSH05A10, Nihon Inter Electronics
5A Avg. 100 Volts SBD
GSH05A10
INSTANTANEOUS FORWARD CURRENT (A)
AVERAGE REVERSE POWER DISSIPATION (W)
20 10
5
2 1 0.5
0
FORWARD CURRENT VS. VOLT.
GSH05A10B, Nihon Inter Electronics
S B D T y p e : GSH05A10B
FEATURES *Similar to TO-220AB Case *Low Forward Voltage Drop *Low Power Loss,High Efficiency *High Surge Capability *Tj=150 .
GS-065-004-1-L, GaN Systems
Please note that GaN Systems is an Infineon Technologies Company The document following this cover page is marked as “GaN Systems” document as this is.
GS-065-004-6-L, GaN Systems
Features
• 700 V enhancement mode power transistor • 850 V transient drain-to-source voltage • Bottom-cooled, small 5x6 mm PDFN package • RDS(on) = 31.
GS-065-008-1-L, GaN Systems
Features
• 650 V enhancement mode power transistor • 850 V transient drain-to-source voltage • Bottom-cooled, small 5x6 mm PDFN package • RDS(on) = 22.
