OSP12N60C Datasheet - OCENME

OSP12N60C 600V N-Channel MOSFET

This Power MOSFET is produced using oTcrueensmeem‘si‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These d.

OSP12N60C Features

* 12.0A, 600V, RDS(on) = 0.650Ω @VGS = 10 V

* Low gate charge ( typical 52nC)

* High ruggedness

* Fast switching

* 100% avalanche tested

* Improved dv/dt capability {D GDS TO-220 GD S TO-220F

* ◀▲ {G

* {S Absolute Maximum Ratings T

OSP12N60C-OCENME.pdf

OSP12N60C Datasheet Preview — Preview of OSP12N60C PDF

Datasheet Details

Part number:

OSP12N60C

Manufacturer:

OCENME

File Size:

286.30 KB

Description:

600v n-channel mosfet.

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OSP12N60C OSP12N60C 600V N-Channel MOSFET OCENME

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