OSP12N60C - 600V N-Channel MOSFET

Datasheet Details

This Power MOSFET is produced using oTcrueensmeem‘si‘s advanced planar stripe DMOS technology.

12.0A, 600V, RDS(on) = 0.650Ω @VGS = 10 V.
Low gate charge ( typical 52nC).
High ruggedness.
Fast switching.
100% avalanche tested.
Improved dv/dt capability {D GDS TO-220 GD S TO-220F.
◀▲ {G.
{S Absolute Maximum Ratings TC = 25°Cunless otherwise noted Symbol Parameter VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) IDM Drain Current - Pulsed (Note 1) VGSS Gate-So.

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Published: Nov 21, 2015 |