Datasheet4U Logo Datasheet4U.com

1N4454 - High Conductance Ultra Fast Diode

Datasheet Summary

Description

Electronic versions are uncontrolled except when accessed directly from the Document Repository.

Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

Features

  • availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the.

📥 Download Datasheet

Datasheet preview – 1N4454

Datasheet Details

Part number 1N4454
Manufacturer ON Semiconductor
File Size 142.51 KB
Description High Conductance Ultra Fast Diode
Datasheet download datasheet 1N4454 Datasheet
Additional preview pages of the 1N4454 datasheet.

📁 Similar Datasheet

  • 1N4454 - High Conductance Ultra Fast Diode (NTE)
  • 1N4454 - High Conductance Ultra Fast Diode (Fairchild Semiconductor)
  • 1N4454 - SMALL SIGNAL SWITCHING DIODES (Sunmate)
  • 1N4454 - SILICON SWITCHING DIODE (DIODES)
  • 1N4454 - SIGNAL DIODE (Rectron)
  • 1N4454 - Silicon switching diode (Central Semiconductor)
  • 1N4454 - SWITCHING RECTFIERS (Digitron Semiconductors)
  • 1N4454 - Small-Signal Diode (Vishay)
  • 1N4454 - HIGH SPEED SWITCHING DIODE (EIC)
  • 1N4454 - Silicon Switching Diode (MA-COM)
Other Datasheets by ON Semiconductor
  • 1N4448 - Small Signal Diode
  • 1N4448TR - Small Signal Diode
  • 1N4448WS - Small-Signal Diodes
  • 1N4448WT - High Conductance Fast Switching Diode
  • 1N4001 - Axial Lead Standard Recovery Rectifiers
  • 1N4002 - Axial Lead Standard Recovery Rectifiers
  • 1N4003 - Axial Lead Standard Recovery Rectifiers
  • 1N4004 - Axial Lead Standard Recovery Rectifiers

Full PDF Text Transcription

Click to expand full text
DATA SHEET www.onsemi.com High Conductance Ultra Fast Diode 1N4454 Sourced from Process 1R. See MMBD1201−1205 for characteristics. ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) (Notes 1, 2, 3) Symbol Rating Value Unit WIV IO IF if if(surge) Working Inverse Voltage Average Rectified Current DC Forward Current Recurrent Peak Forward Current Peak Forward Surge Current Pulse Width = 1.0 s Pulse Width = 1.0 ms 50 V 200 mA 400 mA 600 mA A 1.0 4.0 TSTG Storage Temperature Range −65 to +200 °C TJ Operating Junction Temperature 175 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1.
Published: |