2N5401G
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Amplifier transistors.
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2N5401 - PNP General Purpose Amplifier
(Fairchild Semiconductor)
2N5401
2N5401
Amplifier Transistor
• Collector-Emitter Voltage: VCEO= 150V • Collector Dissipation: PC (max)=625mW • Suffix “-C” means Conter Collec.
2N5401 - Amplifier Transistor
(ON Semiconductor)
2N5401
Amplifier Transistors
PNP Silicon
Features
• These are Pb−Free Devices*
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Collector − Emitter Volta.
2N5401 - AMPLIFIER TRANSISTOR
(Motorola)
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by 2N5400/D
Amplifier Transistors
PNP Silicon
COLLECTOR 3
2 BASE
1 EMITTER
MAXIMUM RAT.
2N5401 - Bipolar Transistor
(Multicomp)
Bipolar Transistor
Features:
• No External Components Required • Internal Short-Circuit Current Limiting • Internal Thermal Overload Protection
E.
2N5401 - EPITAXIAL PLANAR PNP TRANSISTOR
(KEC)
SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION.
FEATURES High Collector Breakdwon Voltage : VCBO=-160V, VCEO=-150V.
2N5401 - PNP high-voltage transistors
(Philips)
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D186
2N5400; 2N5401 PNP high-voltage transistors
Product specification Supersedes data of Septemb.
2N5401 - Silicon NPN Transistor
(NTE)
2N5400 & 2N5401 Silicon PNP Transistor General Purpose Amplifier
TO92 Type Package
Absolute Maximum Ratings:
Collector−Emitter Voltage, VCEO 2N5400 ..
2N5401 - Silicon PNP Power Transistor
(Inchange Semiconductor)
INCHANGE Semiconductor
isc Silicon PNP Power Transistor
DESCRIPTION ·PNP high-voltage transistor ·Low current (max. 300 mA) ·High voltage (max. 160 V).
2N5401 - HIGH VOLTAGE SWITCHING TRANSISTOR
(UTC)
UNISONIC TECHNOLOGIES CO., LTD
2N5401
PNP SILICON TRANSISTOR
HIGH VOLTAGE SWITCHING TRANSISTOR
FEATURES
* Collector-emitter voltage: VCEO = -150.
2N5401 - SILICON PNP TRANSISTOR
(Central Semiconductor)
2N5400 2N5401
SILICON PNP TRANSISTORS
w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N5400 and 2N5401 are silicon PNP t.