2SC5658RM3T5G Features
* Reduces Board Space
* High hFE, 210
* 460 (typical)
* Low VCE(sat), < 0.5 V
* ESD Performance: Human Body Model; u 2000 V, Machine Model; u 200 V
* Available in 8 mm, 7
* inch/3000 Unit Tape and Reel
* NSV Prefix for Automotive and Other
2SC5658M3T5G_ONSemiconductor.pdf
Datasheet Details
2SC5658RM3T5G, 2SC5658M3T5G
93.77 KB
Npn silicon general purpose amplifier transistor.
This datasheet PDF includes multiple part numbers: 2SC5658RM3T5G, 2SC5658M3T5G.
Please refer to the document for exact specifications by model.
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2SC5658RM3T5G Distributor
