2SC5658RM3T5G Datasheet - ON Semiconductor

2SC5658RM3T5G NPN Silicon General Purpose Amplifier Transistor

2SC5658RM3T5G Features

* Reduces Board Space

* High hFE, 210

* 460 (typical)

* Low VCE(sat), < 0.5 V

* ESD Performance: Human Body Model; u 2000 V, Machine Model; u 200 V

* Available in 8 mm, 7

* inch/3000 Unit Tape and Reel

* NSV Prefix for Automotive and Other

Datasheet Details

2SC5658RM3T5G

93.77 KB

Npn silicon general purpose amplifier transistor.

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