2SK3615 Datasheet, mosfet equivalent, ON Semiconductor

2SK3615 Features

• Mosfet
• Low ON-resistance.
• Ultrahigh-speed switching.
• 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Sour

PDF File Details

Part number:

2SK3615

Manufacturer:

ON Semiconductor ↗

File Size:

93.73kb

Download:

📄 Datasheet

Description:

N-channel silicon mosfet.

2SK3615 Application

• Applications Features
• Low ON-resistance.
• Ultrahigh-speed switching.
• 4V drive. Specifications Absolute Maximum Rating

TAGS

2SK3615

ON Semiconductor

📁 Related Datasheet

2SK3610-01 - N-Channel MOSFET Transistor (Inchange Semiconductor)
isc N-Channel MOSFET Transistor 2SK3610-01 FEATURES ·Drain Current : ID= 14A@ TC=25℃ ·Drain Source Voltage : VDSS= 250V(Min) ·Static Drain-Source On.

2SK3610-01 - N-CHANNEL SILICON POWER MOSFET (Fuji Electric)
2SK3610-01 FUJI POWER MOSFET 200304 N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) TO-220AB Super FAP-G Series Features High speed switching L.

2SK3611-01MR - N-CHANNEL SILICON POWER MOSFET (Fuji Electric)
.. 2SK3611-01MR FUJI POWER MOSFET Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driv.

2SK3611-01MR - N-Channel MOSFET Transistor (Inchange Semiconductor)
isc N-Channel MOSFET Transistor 2SK3611-01MR FEATURES ·Drain Current : ID= 10A@ TC=25℃ ·Drain Source Voltage : VDSS= 250V(Min) ·Static Drain-Source .

2SK3612-01L - N-CHANNEL SILICON POWER MOSFET (Fuji Electric)
2SK3612-01L,S,SJ FUJI POWER MOSFET 200304 Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power .

2SK3612-01S - N-CHANNEL SILICON POWER MOSFET (Fuji Electric)
2SK3612-01L,S,SJ FUJI POWER MOSFET 200304 Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power .

2SK3612-01SJ - N-CHANNEL SILICON POWER MOSFET (Fuji Electric)
2SK3612-01L,S,SJ FUJI POWER MOSFET 200304 Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power .

2SK3612L - N-Channel MOSFET Transistor (Inchange Semiconductor)
isc N-Channel MOSFET Transistor 2SK3612L FEATURES ·Drain Current : ID= 14A@ TC=25℃ ·Drain Source Voltage : VDSS= 250V(Min) ·Static Drain-Source On-R.

2SK3612S - N-Channel MOSFET Transistor (Inchange Semiconductor)
isc N-Channel MOSFET Transistor 2SK3612S FEATURES ·Drain Current : ID= 14A@ TC=25℃ ·Drain Source Voltage : VDSS= 250V(Min) ·Static Drain-Source On-R.

2SK3613-01 - N-CHANNEL SILICON POWER MOSFET (Fuji Electric)
.. 2SK3613-01 FUJI POWER MOSFET 200304 Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low.