A2222SG Datasheet - ON Semiconductor

A2222SG Bipolar Transistor

A2222SG Features

* Adoption of MBIT process

* Large current capacity (IC=

* 10A)

* Low collector-to-emitter saturation voltage (VCE(sat)=

* 250mV(typ.))

* High-speed switching (tf=22ns(typ.)) Speciﬁcations Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-B

Datasheet Details

A2222SG

242.63 KB

Bipolar transistor.

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A2222SG Bipolar Transistor ON Semiconductor

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