B817C - Bipolar Transistor

ON Semiconductor

Datasheet Details

Large current capacitance.
Wide SOA and high durability against breakdown.
Adoption of MBIT process Speciﬁcations Absolute Maximum Ratings at Ta=25°C Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Collector Current (Pulse) Symbol VCBO VCEO VEBO IC ICP Collector Dissipation PC Junction Temperature Tj Storage Temperature Tstg Tc=25°C Conditions Ratings Unit -160 V -140 V --6 V --12 A --20.

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Published: Apr 2, 2021 |