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BBS3002 - P-Channel Power MOSFET

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ON Semiconductor

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BBS3002 P-Channel Power MOSFET by ON Semiconductor - Datasheet Preview — Datasheet preview – BBS3002

Datasheet Details

Part number	BBS3002
Manufacturer	ON Semiconductor
File Size	190.89 KB
Description	P-Channel Power MOSFET
Datasheet	BBS3002 Datasheet
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Features

ON-resistance RDS(on)1=4.4mΩ (typ. ).
Input capacitance Ciss=13200pF (typ. ).
4V drive TO-263 Speciﬁcations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature VDSS VGSS ID IDP PD Tch Storage Temperature Tstg Avalanche Energy (Single Pulse).
1 EAS Avalanche Current.
2 IAV Note :.
1 VDD=--30V, L=100μH, IAV=--60.

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Published: Aug 23, 2015 |