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BDC01D
One Watt Amplifier Transistor
NPN Silicon
Features
• Pb−Free Package is Available*
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Collector −Emitter Voltage Collector −Base Voltage Emitter −Base Voltage Collector Current − Continuous Total Device Dissipation @ TA = 25°C
Derate above 25°C
VCEO VCBO VEBO
IC PD
100 Vdc
100 Vdc 5.0 Vdc
0.5 Adc
1.0 W 8.0 mW/°C
Total Device Dissipation @ TC = 25°C Derate above 25°C
PD
2.5 W 20 mW/°C
Operating and Storage Junction Temperature Range
TJ, Tstg −55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Ambient RqJA
125 °C/W
Thermal Resistance, Junction−to−Case
RqJC
50 °C/W
Maximum ratings are those values beyond which device damage can occur.
BDC01D Datasheet
