BFR30LT1
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Jfet amplifiers.
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BFR30LT1 - JFET Amplifiers
(Motorola Inc)
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by BFR30LT1/D
JFET Amplifiers
N–Channel
2 SOURCE 3 GATE
BFR30LT1 BFR31LT1
3 1
1 DRAIN
.
BFR30 - N-channel field-effect transistors
(NXP)
DISCRETE SEMICONDUCTORS
DATA SHEET
BFR30; BFR31 N-channel field-effect transistors
Product specification Supersedes data of April 1991 File under Dis.
BFR30 - JFET
(Motorola)
BFR30,31
MAXIMUM RATINGS
Rating Drain-Source Voltage Gate-Source Voltage
Symbol VDS vgs
THERMAL CHARACTERISTICS
Characteristic
Symbol
Total Dev.
BFR31 - N-channel field-effect transistors
(NXP)
DISCRETE SEMICONDUCTORS
DATA SHEET
BFR30; BFR31 N-channel field-effect transistors
Product specification Supersedes data of April 1991 File under Dis.
BFR31 - JFET
(Motorola)
BFR30,31
MAXIMUM RATINGS
Rating Drain-Source Voltage Gate-Source Voltage
Symbol VDS vgs
THERMAL CHARACTERISTICS
Characteristic
Symbol
Total Dev.
BFR31LT1 - JFET Amplifiers
(Motorola Inc)
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by BFR30LT1/D
JFET Amplifiers
N–Channel
2 SOURCE 3 GATE
BFR30LT1 BFR31LT1
3 1
1 DRAIN
.
BFR31LT1 - JFET Amplifiers
(ON Semiconductor)
BFR30LT1, BFR31LT1
JFET Amplifiers
N − Channel
Features
• Pb−Free Package is Available
MAXIMUM RATINGS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎRating
Symbol
Value
U.
BFR340F - Low Noise Silicon Bipolar RF Transistor
(Infineon Technologies AG)
Low Noise Silicon Bipolar RF Transistor
• General purpose Low Noise Amplifier • Ideal for low current operation • High breakdown voltage enables
opera.
BFR340L3 - Low Noise Silicon Bipolar RF Transistor
(Infineon Technologies AG)
Low Noise Silicon Bipolar RF Transistor
• Low voltage/ Low current operation • Transition frequency of 14 GHz • High insertion gain • Ideal for low cu.
BFR340T - NPN Silicon RF Transistor
(Infineon Technologies AG)
BFR340T
NPN Silicon RF Transistor Preliminary data
Low voltage/ low current operation Transition frequency of 14 GHz High insertion gain Ideal.
