BUV21G - NPN Silicon Power Transistor
BUV21G Features
* High DC Current Gain: hFE min = 20 at IC = 12 A
* Low VCE(sat), VCE(sat) max = 0.6 V at IC = 8 A
* Very Fast Switching Times: TF max = 0.4 ms at IC = 25 A
* These are Pb
* Free Devices
* MAXIMUM RATINGS Rating Symbol Value Collector
* Emitter Vol
