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BUV21G, BUV21 Datasheet - ON Semiconductor

BUV21G - NPN Silicon Power Transistor

BUV21G Features

* High DC Current Gain: hFE min = 20 at IC = 12 A

* Low VCE(sat), VCE(sat) max = 0.6 V at IC = 8 A

* Very Fast Switching Times: TF max = 0.4 ms at IC = 25 A

* These are Pb

* Free Devices

* MAXIMUM RATINGS Rating Symbol Value Collector

* Emitter Vol

BUV21_ONSemiconductor.pdf

This datasheet PDF includes multiple part numbers: BUV21G, BUV21. Please refer to the document for exact specifications by model.
BUV21G Datasheet Preview Page 2 BUV21G Datasheet Preview Page 3

Datasheet Details

Part number:

BUV21G, BUV21

Manufacturer:

ON Semiconductor ↗

File Size:

108.83 KB

Description:

Npn silicon power transistor.

Note:

This datasheet PDF includes multiple part numbers: BUV21G, BUV21.
Please refer to the document for exact specifications by model.

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