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BUV21G - NPN Silicon Power Transistor

This page provides the datasheet information for the BUV21G, a member of the BUV21 NPN Silicon Power Transistor family.

Datasheet Summary

Features

  • High DC Current Gain: hFE min = 20 at IC = 12 A.
  • Low VCE(sat), VCE(sat) max = 0.6 V at IC = 8 A.
  • Very Fast Switching Times: TF max = 0.4 ms at IC = 25 A.
  • These are Pb.
  • Free Devices.

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Datasheet preview – BUV21G

Datasheet Details

Part number BUV21G
Manufacturer ON Semiconductor
File Size 108.83 KB
Description NPN Silicon Power Transistor
Datasheet download datasheet BUV21G Datasheet
Additional preview pages of the BUV21G datasheet.

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Full PDF Text Transcription

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BUV21 SWITCHMODEt Series NPN Silicon Power Transistor This device is designed for high speed, high current, high power applications. Features • High DC Current Gain: hFE min = 20 at IC = 12 A • Low VCE(sat), VCE(sat) max = 0.6 V at IC = 8 A • Very Fast Switching Times: TF max = 0.4 ms at IC = 25 A • These are Pb−Free Devices* MAXIMUM RATINGS Rating Symbol Value Collector−Emitter Voltage VCEO(SUS) 200 Collector−Base Voltage VCBO 250 Emitter−Base Voltage VEBO 7 Collector−Emitter Voltage (VBE = −1.
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