CPH3122 - Bipolar Transistor

ON Semiconductor

Datasheet Details

Adoption of MBIT processes.
Large current capacity.
Low collector to emitter saturation voltage.
High-speed switching.
Ultrasmall package facilitates miniaturization in end products (mounting height : 0.9mm).
High allowable power dissipation Speciﬁcations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Collector Current (Pulse) Base Cur.

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Published: Jan 20, 2016 |