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CPH3456 - Power MOSFET

Datasheet Summary

Features

  • ON-Resistance RDS(on)1=54mΩ (typ).
  • 1.8V Drive.
  • Pb-Free, Halogen Free and RoHS Compliance Specifications Absolute Maximum Ratings at Ta = 25°C Parameter Symbol Value Unit Drain to Source Voltage VDSS 20 V Gate to Source Voltage VGSS ±12 V Drain Current (DC) ID 3.5 A Drain Current (Pulse) PW≤10μs, duty cycle≤1% IDP 14 A Power Dissipation When mounted on ceramic substrate (900mm2×0.8mm) Junction Temperature PD Tj 1.0 W 150 °C Storage Temperature Tstg.

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Datasheet Details

Part number CPH3456
Manufacturer ON Semiconductor
File Size 429.02 KB
Description Power MOSFET
Datasheet download datasheet CPH3456 Datasheet
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Full PDF Text Transcription

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CPH3456 Power MOSFET 20V, 71mΩ, 3.5A, Single N-Channel www.onsemi.com Features • ON-Resistance RDS(on)1=54mΩ (typ) • 1.8V Drive • Pb-Free, Halogen Free and RoHS Compliance Specifications Absolute Maximum Ratings at Ta = 25°C Parameter Symbol Value Unit Drain to Source Voltage VDSS 20 V Gate to Source Voltage VGSS ±12 V Drain Current (DC) ID 3.5 A Drain Current (Pulse) PW≤10μs, duty cycle≤1% IDP 14 A Power Dissipation When mounted on ceramic substrate (900mm2×0.8mm) Junction Temperature PD Tj 1.0 W 150 °C Storage Temperature Tstg −55 to +150 °C This product is designed to “ESD immunity < 200V*”, so please take care when handling. * Machine Model Thermal Resistance Ratings Parameter Junction to Ambient When mounted on ceramic substrate (900mm2×0.
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