EMH1303 - P-Channel Power MOSFET

ON Semiconductor

Datasheet Details

Low ON-resistance.
1.8V drive.
Protection diode in Speciﬁcations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature VDSS VGSS ID IDP PD Tch Storage Temperature Tstg Conditions PW≤10μs, duty cycle≤1% Mounted on a ceramic board (1200mm2×0.8mm) Ratings --12 ±10 --7 --28 1.5 150 --55 to +150 Unit V V A A W °C °C Stresses exc.

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Published: Nov 6, 2015 |