ESD5Z12T1G Datasheet - ON Semiconductor

ESD Protection Diode

ESD5Z12T1G Features

* Low Clamping Voltage

* Small Body Outline Dimensions: 0.047

* x 0.032

* (1.20 mm x 0.80 mm)

* Low Body Height: 0.028

* (0.7 mm)

* Stand

* off Voltage: 2.5 V

* 12 V

* Peak Power up to 240 Watts @ 8 x 20 ms Pulse

* Low Leakage

* Response Time is Ty

ESD5Z12T1G General Description

of survivability specs. ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Symbol Parameter IPP Maximum Reverse Peak Pulse Current VC Clamping Voltage @ IPP VRWM Working Peak Reverse Voltage IR Maximum Reverse Leakage Current @ VRWM VBR Breakdown Voltage @ IT IT Test Current .

ESD5Z12T1G Datasheet (213.39 KB)

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ESD5Z12T1G

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ON Semiconductor ↗

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Description:

Esd protection diode.
DATA SHEET www.onsemi.com ESD Protection Diode Micro Packaged Diodes for ESD Protection ESD5Z2.5T1G Series, SZESD5Z2.5T1G Series The ESD5Z S.

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ESD5Z12T1G Features

ESD5Z12T1G General Description

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