FCA76N60N - N-Channel SupreMOS MOSFET

ON Semiconductor

FCA76N60N Datasheet Preview — Preview of FCA76N60N PDF

Datasheet Details

Part number	FCA76N60N
Manufacturer	ON Semiconductor ↗
File Size	3.98 MB
Description	N-Channel SupreMOS MOSFET
Datasheet	FCA76N60N-ONSemiconductor.pdf

FCA76N60N Product details

Description

The SupreMOS® MOSFET is ON Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs.

Features

RDS(on) = 28 mΩ (Typ. ) @ VGS = 10 V, ID = 38 A.
Ultra Low Gate Charge (Typ. Qg = 218 nC).
Low Effective Output Capacitance (Typ. Coss(eff. ) = 914 pF).
100% Avalanche Tested.
RoHS Compliant.

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Published: Jan 17, 2020 |