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FCA76N60N N-Channel SupreMOS MOSFET

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Description

FCA76N60N * N-Channel SupreMOS® MOSFET FCA76N60N N-Channel SupreMOS® MOSFET 600 V, 76 A, 36 mΩ Sept 2017 .
The SupreMOS® MOSFET is ON Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that.

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Features

* RDS(on) = 28 mΩ (Typ. ) @ VGS = 10 V, ID = 38 A
* Ultra Low Gate Charge (Typ. Qg = 218 nC)
* Low Effective Output Capacitance (Typ. Coss(eff. ) = 914 pF)
* 100% Avalanche Tested

Applications

* such as PFC, server/telecom power, FPD TV power, ATX power, and industrial power applications. D G G D S TO-3PN MOSFET Maximum Ratings TC = 25oC unless otherwise noted. S Symbol VDSS VGSS ID IDM EAS IAR EAR dv/dt PD Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Dra

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📌 All Tags

FCA76N60N N-Channel SupreMOS MOSFET ON Semiconductor
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