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FCH023N65S3 - N-Channel MOSFET

Description

SUPERFET III MOSFET is onsemi’s brand new high voltage super junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on

resistance and lower gate charge performance.

Features

  • 700 V @ TJ = 150°C.
  • Typ. RDS(on) = 19.5 mW.
  • Ultra Low Gate Charge (Typ. Qg = 222 nC).
  • Low Effective Output Capacitance (Typ. Coss(eff. ) = 1980 pF).
  • 100% Avalanche Tested.
  • These Devices are Pb.
  • Free and are RoHS Compliant.

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Datasheet Details

Part number FCH023N65S3
Manufacturer ON Semiconductor
File Size 416.28 KB
Description N-Channel MOSFET
Datasheet download datasheet FCH023N65S3 Datasheet
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Full PDF Text Transcription

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MOSFET – Power, N-Channel, SUPERFET) III, Easy Drive 650 V, 75 A, 23 mW FCH023N65S3 Description SUPERFET III MOSFET is onsemi’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provides superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET Easy drive series helps manage EMI issues and allows for easier design implementation. Features • 700 V @ TJ = 150°C • Typ. RDS(on) = 19.5 mW • Ultra Low Gate Charge (Typ. Qg = 222 nC) • Low Effective Output Capacitance (Typ. Coss(eff.
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