Datasheet4U Logo Datasheet4U.com

FCH041N60F-F085 - N-Channel MOSFET

Datasheet Summary

Description

SuperFET® II MOSFET is ON Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.

Features

  • Typical RDS(on) = 36 mΩ at VGS = 10 V, ID = 38 A.
  • Typical Qg(tot) = 267 nC at VGS = 10V, ID = 38 A.
  • Low Effective Output Capacitance (Typical Coss(eff. ) = 720 nF).
  • 100% Avalanche Tested.
  • Qualified to AEC Q101.
  • RoHS Compliant.

📥 Download Datasheet

Datasheet preview – FCH041N60F-F085

Datasheet Details

Part number FCH041N60F-F085
Manufacturer ON Semiconductor
File Size 551.26 KB
Description N-Channel MOSFET
Datasheet download datasheet FCH041N60F-F085 Datasheet
Additional preview pages of the FCH041N60F-F085 datasheet.

📁 Similar Datasheet

Other Datasheets by ON Semiconductor

Full PDF Text Transcription

Click to expand full text
FCH041N60F-F085 N-Channel SuperFET II FRFET MOSFET FCH041N60F-F085 N-Channel SuperFET II FRFET MOSFET 600 V, 76 A, 41 mΩ Features „ Typical RDS(on) = 36 mΩ at VGS = 10 V, ID = 38 A „ Typical Qg(tot) = 267 nC at VGS = 10V, ID = 38 A „ Low Effective Output Capacitance (Typical Coss(eff.) = 720 nF) „ 100% Avalanche Tested „ Qualified to AEC Q101 „ RoHS Compliant Description SuperFET® II MOSFET is ON Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy.
Published: |