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FDB045AN08A0 - N-Channel MOSFET

Key Features

  • RDS(on) = 3.9 mΩ ( Typ. ) @ VGS = 10 V, ID = 80 A.
  • QG(tot) = 92 nC ( Typ. ) @ VGS = 10 V.
  • Low Miller Charge.
  • Low Qrr Body Diode.
  • UIS Capability (Single Pulse and Repetitive Pulse).

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Part Number Description Manufacturer
FDB045AN08A0 N-Channel MOSFET Fairchild Semiconductor

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FDB045AN08A0 — N-Channel PowerTrench® MOSFET FDB045AN08A0 N-Channel PowerTrench® MOSFET 75 V, 80 A, 4.5 mΩ Features • RDS(on) = 3.9 mΩ ( Typ.) @ VGS = 10 V, ID = 80 A • QG(tot) = 92 nC ( Typ.