FDB045AN08A0
Features
- RDS(on) = 3.9 mΩ ( Typ.) @ VGS = 10 V, ID = 80 A
- QG(tot) = 92 n C ( Typ.) @ VGS = 10 V
- Low Miller Charge
- Low Qrr Body Diode
- UIS Capability (Single Pulse and Repetitive Pulse)
Applications
- Synchronous Rectification for ATX / Server / Tele PSU
- Battery Protection Circuit
- Motor drives and Uninterruptible Power Supplies
Formerly developmental type 82684
D2-PAK
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol VDSS VGS
EAS PD
Parameter Drain to Source Voltage
Gate to Source Voltage
Drain Current Continuous (TC < 137o C, VGS = 10V) Continuous (Tamb = 25o C, VGS = 10V, with RθJA = 43o C/W) Pulsed
Single Pulse Avalanche Energy (Note 1)
Power dissipation Derate above 25o C
TJ, TSTG Operating and Storage Temperature
Thermal Characteristics
RθJC RθJA RθJA
Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient (Note 2) Thermal Resistance Junction to Ambient, 1in2 copper pad area
FDB045AN08A0 75 ±20
90 19 Figure 4 600...
