FDD86250_F085
Features
- Typical RDS(on) = 19.4 mΩ at VGS = 10V, ID = 20 A
- Typical Qg(tot) = 28 n C at VGS = 10V, ID = 40 A
- UIS Capability
- Ro HS pliant
- Qualified to AEC Q101
Applications
- Automotive Engine Control
- Power Train Management
- Solenoid and Motor Drivers
- Integrated Starter/Alternator
- Distributed Power Architectures and VRM
- Primary Switch for 12V Systems
DTO-P-2A5K2
(TO-252)
MOSFET Maximum Ratings TJ = 25°C unless otherwise noted.
Symbol
Parameter
VDSS VGS
Drain-to-Source Voltage Gate-to-Source Voltage Drain Current
- Continuous (VGS=10V) (Note 2) Pulsed Drain Current
Single Pulse Avalanche Energy
Power Dissipation
Derate Above 25o C
TJ, TSTG Operating and Storage Temperature
RθJC
Thermal Resistance, Junction to Case
RθJA
Maximum Thermal Resistance, Junction to Ambient
TC = 25°C TC = 25°C
(Note 3)
(Note 4)
Ratings 150 ±20 50
See Figure 4 80 160...
