• Part: FDD86367-F085
  • Description: 80V 100A N-Channel MOSFET
  • Category: MOSFET
  • Manufacturer: onsemi
  • Size: 219.03 KB
Download FDD86367-F085 Datasheet PDF
onsemi
FDD86367-F085
Features - Typical RDS(on) = 3.3 m W at VGS = 10 V, ID = 80 A - Typical Qg(tot) = 68 n C at VGS = 10 V, ID = 80 A - UIS Capability - AEC- Q101 Qualified and PPAP Capable - This Device is Pb- Free, Halogen Free/BFR Free and is Ro HS pliant Applications - Automotive Engine Control - Power Train Management - Solenoid and Motor Drivers - Integrated Starter/Alternator - Primary Switch for 12 V Systems MOSFET MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Symbol Parameter Ratings Unit VDSS Drain- to- Source Voltage VGS Gate- to- Source Voltage ±20 Drain Current - Continuous (VGS = 10) (Note 1) TC = 25°C Pulsed Drain Current TC = 25°C See Figure 4 EAS Single Pulse Avalanche Energy (Note 2) 82 m J PD Power Dissipation Derate Above 25°C W/°C TJ, TSTG Rq JC Rq JA Operating and Storage Temperature Thermal Resistance, Junction to...