• Part: FDD86567-F085
  • Description: N-Channel Power MOSFET
  • Category: MOSFET
  • Manufacturer: onsemi
  • Size: 465.72 KB
Download FDD86567-F085 Datasheet PDF
onsemi
FDD86567-F085
Features - Typical RDS(on) = 2.6 mΩ at VGS = 10V, ID = 80 A - Typical Qg(tot) = 63 n C at VGS = 10V, ID = 80 A - UIS Capability - Ro HS pliant - Qualified to AEC Q101 Applications - Automotive Engine Control - Power Train Management - Solenoid and Motor Drivers - Integrated Starter/Alternator - Primary Switch for 12V Systems DTO-P-2A5K2 (TO-252) MOSFET Maximum Ratings TJ = 25°C unless otherwise noted. Symbol Parameter VDSS VGS Drain-to-Source Voltage Gate-to-Source Voltage Drain Current - Continuous (VGS=10) (Note 1) Pulsed Drain Current Single Pulse Avalanche Energy Power Dissipation Derate Above 25o C TJ, TSTG Operating and Storage Temperature RθJC Thermal Resistance, Junction to Case RθJA Maximum Thermal Resistance, Junction to Ambient TC = 25°C TC = 25°C (Note 2) (Note 3) Ratings 60 ±20 100 See Figure 4 115 227 1.52 -55 to + 175 0.66 52 Units V...