Datasheet Details
- Part number
- FDP027N08B
- Manufacturer
- ON Semiconductor ↗
- File Size
- 871.58 KB
- Datasheet
- FDP027N08B-ONSemiconductor.pdf
- Description
- N-Channel MOSFET
FDP027N08B Description
FDP027N08B * N-Channel PowerTrench® MOSFET FDP027N08B N-Channel PowerTrench® MOSFET 80 V, 223 A, 2.7 mΩ .
This N-Channel MOSFET is produced using ON Semiconductor’s PowerTrench® process that has been tailored to minimize the on-state resistance while maint.
FDP027N08B Features
* RDS(on) = 2.21 mΩ ( Typ. ) @ VGS = 10 V, ID = 100 A
* Low FOM RDS(on)
* QG
* Low Reverse-Recovery Charge, Qrr = 112 nC
* Soft Reverse-Recovery Body Diode
* Enables High Efficiency in Synchronous Rectification
* Fast Switching Speed
* 100%
FDP027N08B Applications
* Synchronous Rectification for ATX / Server / Telecom PSU
* Battery Protection Circuit
* Motor Drives and Uninterruptible Power Supplies
D
GDS
TO-220
G
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted. Symbol
Parameter
FDP027N08B_F102
VDSS VGSS
ID
IDM EAS
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