FDP027N08B
Features
- RDS(on) = 2.21 mΩ ( Typ.) @ VGS = 10 V, ID = 100 A
- Low FOM RDS(on)
- QG
- Low Reverse-Recovery Charge, Qrr = 112 n C
- Soft Reverse-Recovery Body Diode
- Enables High Efficiency in Synchronous Rectification
- Fast Switching Speed
- 100% UIL Tested
- This device is Pb-Free, Halogen Free/BFR Free and is Ro HS pliant
Description
This N-Channel MOSFET is produced using ON Semiconductor’s Power Trench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
Applications
- Synchronous Rectification for ATX / Server / Tele PSU
- Battery Protection Circuit
- Motor Drives and Uninterruptible Power Supplies
TO-220
MOSFET Maximum Ratings TC = 25o C unless otherwise noted.
Symbol
Parameter
FDP027N08B_F102
VDSS VGSS
IDM EAS dv/dt
Drain to Source Voltage
Gate to Source Voltage Drain Current Drain Current
- Continuous (TC = 25o C, Silicon Limited)
- Continuous (TC = 100o C, Silicon Limited)
- Continuous...
