FDP027N08B

N-Channel MOSFET

ON Semiconductor

FDP027N08B Features

* RDS(on) = 2.21 mΩ ( Typ.) @ VGS = 10 V, ID = 100 A

* Low FOM RDS(on)

* QG

* Low Reverse-Recovery Charge, Qrr = 112 nC

* Soft Reverse-Recovery Body Diode

* Enables High Efficiency in Synchronous Rectification

* Fast Switching Speed

* 100%

FDP027N08B General Description

This N-Channel MOSFET is produced using ON Semiconductor’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance. Applications

* Synchronous Rectification for ATX / Server / Telecom PSU

* Battery Protection Ci.

FDP027N08B Datasheet (871.58 KB)