FDP038AN06A0
Features
Applications
- RDS(on) = 3.5 mΩ ( Typ.) @ VGS = 10 V, ID = 80 A
- QG(tot) = 96 n C ( Typ.) @ VGS = 10 V
- Low Miller Charge
- Low Qrr Body Diode
- UIS Capability (Single Pulse and Repetitive Pulse) Formerly developmental type 82584
- Synchronous Rectification for ATX / Server / Tele PSU
- Battery Protection Circuit
- Motor drives and Uninterruptible Power Supplies
TO-220
I2-PAK
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Parameter
VDSS VGS
EAS PD TJ, TSTG
Drain to Source Voltage
Gate to Source Voltage
Drain Current Continuous (TC < 151o C, VGS = 10V) Continuous (Tamb = 25o C, VGS = 10V, with RθJA = 62o C/W) Pulsed
Single Pulse Avalanche Energy (Note 1)
Power dissipation Derate above 25o C
Operating and Storage Temperature
Thermal Characteristics
RθJC RθJA
Thermal Resistance, Junction to Case, Max. Thermal Resistance, Junction to Ambient, Max. (Note 2)
FDP038AN06A0 FDI038AN06A0
60 ±20
80 17 Figure 4 625 310 2.07 -55 to...
