FDP050AN06A0
Features
- RDS(on) = 4.3 mΩ ( Typ.) @ VGS = 10 V, ID = 80 A
- QG(tot) = 61 n C ( Typ.) @ VGS = 10 V
- Low Miller Charge
- Low Qrr Body Diode
- UIS Capability (Single Pulse and Repetitive Pulse)
Applications
- Synchronous Rectification for ATX / Server / Tele PSU
- Battery Protection Circuit
- Motor drives and Uninterruptible Power Supplies
Formerly developmental type 82575
TO-220
D2-PAK
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Parameter
VDSS VGS
EAS PD TJ, TSTG
Drain to Source Voltage
Gate to Source Voltage
Drain Current Continuous (TC < 135o C, VGS = 10V) Continuous (TA = 25o C, VGS = 10V, RθJA = 43o C/W) Pulsed
Single Pulse Avalanche Energy (Note 1)
Power dissipation Derate above 25o C
Operating and Storage Temperature
FDP050AN06A0 FDB050AN06A0
60 ±20
80 18 Figure 4 470 245 1.63 -55 to 175
Thermal Characteristics
RθJC
Thermal Resistance Junction to Case, Max. TO-220, D2-PAK
RθJA
Thermal Resistance Junction to Ambient,...
