FDP053N08B

N-Channel MOSFET

ON Semiconductor

FDP053N08B Features

* RDS(on) = 4.2 mΩ (Typ.) @ VGS = 10 V, ID = 75 A

* Low FOM RDS(on)

* QG

* Low Reverse-Recovery Charge, Qrr = 62.5 nC

* Soft Reverse-Recovery Body Diode

* Enables High Efficiency in Synchronous Rectification

* Fast Switching Speed

* 100% UI

FDP053N08B General Description

This N-Channel MOSFET is produced using ON Semiconductor’s advanced PowerTrench® process that has been tai-lored to minimize the on-state resistance while maintaining superior switching performance. Applications

* Synchronous Rectification for ATX / Server / Telecom PSU

* Battery Pro.

FDP053N08B Datasheet (1.69 MB)