FDP075N15A
Description
This N- Channel MOSFET is produced using onsemi advanced
POWERTRENCH process that has been tailored to minimize the on- state resistance while maintaining superior switching performance.
Features
- RDS(on) = 6.25 m W (Typ.) @ VGS = 10 V, ID = 100 A
- Fast Switching
- Low Gate Charge
- High Performance Trench Technology for Extremely Low RDS(on)
- High Power and Current Handling Capability
- Ro HS pliant
Applications
- Synchronous Rectification for ATX / Server / Tele PSU
- Battery Protection Circuit
- Motor Drives and Uninterruptible Power Supplies
- Micro Solar Inverter
DATA SHEET .onsemi.
VDSS
RDS(ON) MAX
150 V
7.5 m W @ 10 V
- Package limitation current is 120 A.
ID MAX 130 A
TO- 220 CASE 221A- 09
G DS
D D2PAK- 3 (TO- 263, 3- LEAD)
CASE 418AJ
MARKING DIAGRAM
$Y&Z&3&K FDP
075N15A
$Y&Z&3&K FDB
075N15A
$Y
= onsemi logo
FDP075N15A = Device Code
FDB075N15A
&Z
= Assembly Plant Code
&3
= 3- Digit Date Code...
