• Part: FDP3652
  • Description: 100V 61A N-Channel MOSFET
  • Category: MOSFET
  • Manufacturer: onsemi
  • Size: 473.27 KB
Download FDP3652 Datasheet PDF
onsemi
FDP3652
Features - RDS(on) = 14 m W (Typ.) @ VGS = 10 V, ID = 61 A - Qg(tot) = 41 n C (Typ.) @ VGS = 10 V - Low Miller Charge - Low QRR Body Diode - UIS Capability (Single Pulse and Repetitive Pulse) - These Devices are Pb- Free and Halide Free Applications - Synchronous Rectification for ATX / Server / Tele PSU - Battery Protection Circuit - Motor Drives and Uninterruptible Power Supplies - Micro Solar Inverter MOSFET MAXIMUM RATINGS (TC = 25°C, unless otherwise noted) Symbol Parameter FDP3652 / FDB3652 Unit VDSS Drain to Source Voltage VGS Gate to Source Voltage +20 Drain Current Continuous (TC = 25°C, VGS = 10 V) Continuous (TC = 100°C, VGS = 10 V) Continuous (Tamb = 25°C, VGS = 10 V), 9 with Rq JA = 43°C/W) Pulsed Figure 4 EAS Single Pulse Avalanche Energy (Note 1) PD Power Dissipation Derate above 25°C 182 m J W/°C TJ, TSTG Operating and Storage Temperature - 55 to...