Description
DATA SHEET www.onsemi.com MOSFET * N-Channel, Shielded Gate POWERTRENCH) 100 V, 128 A, 4.5 mW GDS GDS FDP4D5N10C, FDPF4D5N10C .
This N.
Channel MV MOSFET is produced using onsemi’s
advanced PowerTrench process that incorporates Shielded Gate technology.
Features
* Max RDS(on) = 4.5 mW at VGS = 10 V, ID = 100 A
* Extremely Low Reverse Recovery Charge, Qrr
* 100% UIL Tested
* This Device is Pb
Applications
* Synchronous Rectification for ATX / Server / Telecom PSU
* Motor Drives and Uninterruptible Power Supplies
* Micro Solar Inverter
S MARKING DIAGRAM
FDPF 5N10C AYWWZZ
FDPF4D5N10C,
FQD45N10C = Specific Device Code
A
= Assembly Location
YWW
= Date Code (Year and Week)
