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FDS5690 60V N-Channel Power MOSFET

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Description

FDS5690 FDS5690 60V N-Channel PowerTrench MOSFET General .
Features This N-Channel MOSFET is produced using Semiconductor's advanced PowerTrench process ON that. 7 A, 60 V.

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Features

* This N-Channel MOSFET is produced using Semiconductor's advanced PowerTrench process ON that
* 7 A, 60 V. RDS(on) = 0.028 Ω @ VGS = 10 V has been especially tailored to minimize on-state RDS(on) = 0.033 Ω @ VGS = 6 V. resistance and yet maintain superior switching performance.

Applications

* where fast switching are required. low in-line power loss and
* High performance trench technology for extremely low RDS(ON). Applications
* High power and current handling capability.
* DC/DC converter
* Motor drives D D D D 5 4 6 3 SO-8 G SS S 7 2

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