FDT457N Datasheet, Mosfet, ON Semiconductor

FDT457N Features

• Mosfet
• 5 A, 30 V RDS(on) = 0.06 W @ VGS = 10 V RDS(on) = 0.090 W @ VGS = 4.5 V
• High Density Cell Design for Extremely Low RDS(ON)
• High Power and Current Handling

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Part number:

FDT457N

Manufacturer:

ON Semiconductor ↗

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198.81kb

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📄 Datasheet

Description:

N-channel mosfet. These N

Channel enhancement mode power field effect transistors are produced using onsemi’s proprietary, high cell density, D

FDT457N Application

• Applications such as notebook computer power management, battery powered circuits, and DC motor control. Features
• 5 A, 30 V RDS(on) = 0.06

TAGS

FDT457N

ON Semiconductor

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