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FDT457N N-Channel MOSFET

FDT457N Description

Transistor, N-Channel, Field Effect, Enhancement Mode FDT457N General .
These N. Channel enhancement mode power field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology.

FDT457N Features

* 5 A, 30 V RDS(on) = 0.06 W @ VGS = 10 V RDS(on) = 0.090 W @ VGS = 4.5 V
* High Density Cell Design for Extremely Low RDS(ON)
* High Power and Current Handling Capability in a Widely Used Surface Mount Package
* This Device is Pb
* Free ABSOLUTE MAXIMUM RATING

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N-Channel MOSFET ON Semiconductor
ON Semiconductor FDT457N-like datasheet