FDT457N Description
These N−Channel enhancement mode power field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on−state resistance, provide superior switching performance. These products are well suited to low voltage, low current applications such as notebook puter power management, battery powered circuits, and DC motor...
FDT457N Key Features
- 5 A, 30 V
- High Density Cell Design for Extremely Low RDS(ON)
- High Power and Current Handling Capability in a Widely Used
- This Device is Pb-Free