FDT457N

N-Channel MOSFET

ON Semiconductor

FDT457N Features

* 5 A, 30 V RDS(on) = 0.06 W @ VGS = 10 V RDS(on) = 0.090 W @ VGS = 4.5 V

* High Density Cell Design for Extremely Low RDS(ON)

* High Power and Current Handling Capability in a Widely Used Surface Mount Package

* This Device is Pb

* Free ABSOLUTE MAXIMUM RATING

FDT457N General Description

These N

*Channel enhancement mode power field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on

*state resistance, provide superior switching performance. These products a.

FDT457N Datasheet (198.81 KB)