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FFPF15S60S - Diode

Datasheet Summary

Description

characteristics.

implanted epitaxial planar construction.

This device is intended for use as freewheeling of boost diode in switching power supplies and other power switching applications.

Features

  • Stealth Recovery Trr= 35 ns (@ IF= 15 A).
  • Max Forward Voltage, VF= 2.6 V (@ TC = 25°C).
  • 600 V Reverse Voltage and High Reliability.
  • Improved dv/dt Capability.
  • This Device is Pb.
  • Free and is RoHS Compliant.

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Datasheet preview – FFPF15S60S

Datasheet Details

Part number FFPF15S60S
Manufacturer ON Semiconductor
File Size 200.71 KB
Description Diode
Datasheet download datasheet FFPF15S60S Datasheet
Additional preview pages of the FFPF15S60S datasheet.

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Full PDF Text Transcription

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15 A, 600 V, STEALTHt II Diode FFPF15S60S Description The FFPF15S60S is STEALTHt II rectifier with soft recovery characteristics. It is silicon nitride passivated ion−implanted epitaxial planar construction. This device is intended for use as freewheeling of boost diode in switching power supplies and other power switching applications. Their low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors. Features • Stealth Recovery Trr= 35 ns (@ IF= 15 A) • Max Forward Voltage, VF= 2.
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