FFSB2065BDN-F085 Silicon Carbide Schottky Diode

ON Semiconductor

Description

Silicon Carbide (SiC) Schottky Diode * EliteSiC, 20 A, 650 V, D2, D2PAK-3L FFSB2065BDN-F085 .
Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to.

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Datasheet Specifications

Part number: FFSB2065BDN-F085
Manufacturer: ON Semiconductor ↗
File Size: 233.66 KB
Datasheet: FFSB2065BDN-F085-ONSemiconductor.pdf
Description: Silicon Carbide Schottky Diode

Features

* Max Junction Temperature 175°C
* Avalanche Rated 49 mJ
* High Surge Current Capacity
* Positive Temperature Coefficient
* Ease of Paralleling
* No Reverse Recovery/No Forward Recovery
* AEC

Applications

* Automotive BEV
* EV
* Automotive HEV
* EV Onboard Chargers
* Automotive HEV
* EV DC
* DC Converters MOSFET MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Symbol Parameter Ratings Unit VRRM Peak Repetitive Reverse Voltage 650 V EAS Single

FFSB2065BDN-F085 Distributors

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FFSB2065BDN-F085 Silicon Carbide Schottky Diode ON Semiconductor

ON Semiconductor FFSB2065BDN-F085-like datasheet