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FFSB2065BDN-F085 Silicon Carbide Schottky Diode

FFSB2065BDN-F085 Description

Silicon Carbide (SiC) Schottky Diode * EliteSiC, 20 A, 650 V, D2, D2PAK-3L FFSB2065BDN-F085 .
Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to.

FFSB2065BDN-F085 Features

* Max Junction Temperature 175°C
* Avalanche Rated 49 mJ
* High Surge Current Capacity
* Positive Temperature Coefficient
* Ease of Paralleling
* No Reverse Recovery/No Forward Recovery
* AEC

FFSB2065BDN-F085 Applications

* Automotive BEV
* EV
* Automotive HEV
* EV Onboard Chargers
* Automotive HEV
* EV DC
* DC Converters MOSFET MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Symbol Parameter Ratings Unit VRRM Peak Repetitive Reverse Voltage 650 V EAS Single

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📁 Related Datasheet

  • FFSM0465A - SiC Schottky Diode (onsemi)
  • FFSP3065A - Silicon Carbide Schottky Diode (Fairchild Semiconductor)

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Silicon Carbide Schottky Diode ON Semiconductor
ON Semiconductor FFSB2065BDN-F085-like datasheet