FGB40T65SPD-F085 Datasheet - ON Semiconductor

IGBT

FGB40T65SPD-F085 Features

* Low Saturation Voltage: VCE(sat) = 2.0 V (Typ.) @ IC = 40 A

* 100% of the Parts are Dynamically Tested

* Short Circuit Ruggedness > 5 ms @ 25°C

* Maximum Junction Temperature : TJ = 175°C

* Fast Switching

* Tight Parameter Distribution

FGB40T65SPD-F085 General Description

Using the novel field stop 3rd generation IGBT technology, FGH40T65SPD *F085 offers the optimum performance with both low conduction loss and switching loss for a high efficiency operation in various applications, while provides 50 V higher blocking voltage and rugged high current switching r.

FGB40T65SPD-F085 Datasheet (1.97 MB)