FGD3325G2-F085 Datasheet, igbt equivalent, ON Semiconductor

FGD3325G2-F085 Features and benefits

FGD3325G2-F085 Application

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FGD3325G2_F085 - N-Channel Ignition IGBT (Fairchild Semiconductor)
FGD3325G2_F085 EcoSPARK®2 330mJ, 250V, N-Channel Ignition IGBT FGD3325G2_F085 EcoSPARK®2 330mJ, 250V, N-Channel Ignition IGBT April 2015 Features „.

FGD3040G2-F085 - N-Channel IGBT (ON Semiconductor)
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FGD3040G2-F085C - N-Channel IGBT (ON Semiconductor)
FGD3040G2-F085C FGB3040G2-F085C EcoSPARK) 2 Ignition IGBT 300 mJ, 400 V, N−Channel Ignition IGBT Features • SCIS Energy = 300 mJ at TJ = 25°C • Logi.

FGD3040G2-F085V - N-Channel IGBT (ON Semiconductor)
FGD3040G2-F085V EcoSPARK) 2 Ignition IGBT 300 mJ, 400 V, N−Channel Ignition IGBT Features • SCIS Energy = 300 mJ at TJ = 25°C • Logic Level Gate Dri.

FGD3040G2_F085 - N-Channel Ignition IGBT (Fairchild Semiconductor)
FGB3040G2_F085 / FGD3040G2_F085 / FGP3040G2_F085 / FGI3040G2_F085 May 2014 FGB3040G2_F085 / FGD3040G2_F085 FGP3040G2_F085 / FGI3040G2_F085 EcoSPARK.

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DATA SHEET www.onsemi.com ECOSPARK) II, Ignition IGBT COLLECTOR 300 mJ, 500 V, N−Channel Ignition IGBT FGD3050G2 Features • SCIS Energy = 300 mJ .

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FGD3245G2-F085C - N-Channel IGBT (ON Semiconductor)
EcoSPARK) 2 Ignition IGBT 320 mJ, 450 V, N−Channel Ignition IGBT FGD3245G2-F085C Features  SCIS Energy = 320 mJ at TJ = 25C  Logic Level Gate Dri.

FGD3245G2-F085V - N-Channel IGBT (ON Semiconductor)
FGD3245G2-F085V EcoSPARK) 2 Ignition IGBT 320 mJ, 450 V, N−Channel Ignition IGBT Features • SCIS Energy = 320 mJ at TJ = 25°C • Logic Level Gate Dri.