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FGH40T65UQDF IGBT

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Description

IGBT - Field Stop, Trench 650 V, 40 A FGH40T65UQDF .
Using novel field stop IGBT technology, ON Semiconductor’s new series of field stop 4th generation IGBTs offer superior conduction and switching perfo.

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Features

* Max Junction Temperature 175°C
* Positive Temperature Co
* efficient for Easy Parallel Operating
* High Current Capability
* Low Saturation Voltage: VCE(sat) = 1.33 V (Typ. ) @ IC = 40 A
* 100% of the Parts Tested for ILM
* High Input Impedance

Applications

* Induction Heating, MWO www. onsemi. com VCES 650 V IC 40 A C G E E C G COLLECTOR (FLANGE) TO
* 247
* 3LD CASE 340CH MARKING DIAGRAM $Y&Z&3&K FGH40T65 UQDF © Semiconductor Components Industries, LLC, 2016 November, 2019
* Rev. 3 $Y &Z &3 &K FGH40T65UQDF = ON Semico

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📌 All Tags

FGH40T65UQDF IGBT ON Semiconductor
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