* Maximum Junction Temperature: TJ = 175°C
* Positive Temperature Co
* efficient for Easy Parallel Operating
* High Current Capability
* Low Saturation Voltage: VCE(Sat) = 1.6 V (Typ.) @ IC = 75 A
* 100% of the Parts Tested for ILM(1)
* High Inpu
FGH75T65SHDTLN4 Datasheet (459.79 KB)
FGH75T65SHDTLN4
459.79 KB
Igbt.
IGBT - Field Stop, Trench
650 V, 75 A
Product Preview FGH75T65SHDTLN4
Using the novel field stop 3rd generation IGBT technology,
FGH75T65SHDTLN4 off.
📁 Related Datasheet
FGH75T65SHDTL4 IGBT (ON Semiconductor)
FGH75T65SHDT IGBT (ON Semiconductor)
FGH75T65SHD IGBT (ON Semiconductor)
FGH75T65SQD IGBT (ON Semiconductor)
FGH75T65SQDNL4 IGBT (ON Semiconductor)
FGH75T65SQDT IGBT (ON Semiconductor)
FGH75T65SQDTL4 IGBT (ON Semiconductor)
FGH75T65UPD 75A Field Stop Trench IGBT (Fairchild Semiconductor)
FGH75T65UPD IGBT (ON Semiconductor)
FGH75T65UPD-F155 IGBT (ON Semiconductor)
