* Maximum Junction Temperature: TJ = 175°C
* Positive Temperature Co
* efficient for Easy Parallel Operating
* High Current Capability
* Low Saturation Voltage: VCE(sat) = 1.36 V (Typ.) @IC = 40 A
* 100% of the Parts tested for ILM (Note 1)
* Hig
FGHL40S65UQ Datasheet (246.55 KB)
FGHL40S65UQ
246.55 KB
Igbt.
FGHL40S65UQ
Product Preview Field Stop Trench IGBT
40 A, 650 V
Using the novel field stop generation IGBT technology, ON Semiconductor’s new series .
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