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FGHL40S65UQ IGBT

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Description

FGHL40S65UQ Product Preview Field Stop Trench IGBT 40 A, 650 V Using the novel field stop generation IGBT technology, ON Semiconductor’s new series .

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Features

* Maximum Junction Temperature: TJ = 175°C
* Positive Temperature Co
* efficient for Easy Parallel Operating
* High Current Capability
* Low Saturation Voltage: VCE(sat) = 1.36 V (Typ. ) @IC = 40 A
* 100% of the Parts tested for ILM (Note 1)
* Hig

Applications

* Induction Heating
* Microwave Oven
* Soft Switching Application MAXIMUM RATINGS Rating Symbol Value Unit Collector to Emitter Voltage Gate to Emitter Voltage Transient Gate to Emitter Voltage VCES 650 V VGES ±20 V ±30 Collector Current @TC = 25°C @TC = 100°C IC

FGHL40S65UQ Distributors

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📌 All Tags

FGHL40S65UQ IGBT ON Semiconductor
ON Semiconductor FGHL40S65UQ-like datasheet
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