FJV42 Datasheet - ON Semiconductor

FJV42 NPN High-Voltage Transistor

98ASB42226B Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. SOT *23 (TO *236) 2.90x1.30x1.00 1.90P PAGE 1 OF 2 onsemi and are trademarks of Semiconduc.

NPN High-Voltage Transistor FJV42 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Symbol Parameter Value Unit VCEO Collector Emitter Voltage 350 V VCBO Collector Base Voltage 350 V VEBO Emitter Base Voltage 6 V IC Collector Current 500 mA TSTG Storage Temperature Range 55 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should n.

FJV42 Datasheet (151.76 KB)