FOD8342T
Key Features
- FOD8342T - 8 mm Creepage and Clearance Distance, and 0.4 mm Insulation Distance to Achieve Reliable and High-Voltage Insulation
- 3.0 A Peak Output Current Driving Capability for Medium- Power IGBT/MOSFET
- Use of P-Channel MOSFETs at Output Stage Enables Output Voltage Swing Close to Supply Rail
- 20 kV/ms Minimum Common Mode Rejection
- Wide Supply Voltage Range: 10 V to 30 V
- Fast Switching Speed Over Full Operating Temperature Range
- 210 ns Maximum Propagation Delay
- 65 ns Maximum Pulse Width Distortion
- Under-Voltage Lockout (UVLO) with Hysteresis
- Extended Industrial Temperate Range: -40°C to 100°C
