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FQA10N80C-F109 — N-Channel QFET® MOSFET
FQA10N80C-F109
N-Channel QFET® MOSFET
800 V, 10 A, 1.1 Ω
Features
• 10 A, 800 V, RDS(on) = 1.1 Ω (Max.) @ VGS = 10 V, ID = 5 A • Low Gate Charge (Typ. 44 nC) • Low Crss (Typ. 15 pF) • 100% Avalanche Tested • RoHS compliant
Description
This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
D
G D S
TO-3PN
G
MOSFET Maximum Ratings TC = 25oC unless otherwise noted.
FQA10N80C-F109 Datasheet
