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FQA10N80C-F109 - N-Channel QFET MOSFET

Description

This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary planar stripe and DMOS technology.

Features

  • 10 A, 800 V, RDS(on) = 1.1 Ω (Max. ) @ VGS = 10 V, ID = 5 A.
  • Low Gate Charge (Typ. 44 nC).
  • Low Crss (Typ. 15 pF).
  • 100% Avalanche Tested.
  • RoHS compliant.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FQA10N80C-F109 — N-Channel QFET® MOSFET FQA10N80C-F109 N-Channel QFET® MOSFET 800 V, 10 A, 1.1 Ω Features • 10 A, 800 V, RDS(on) = 1.1 Ω (Max.) @ VGS = 10 V, ID = 5 A • Low Gate Charge (Typ. 44 nC) • Low Crss (Typ. 15 pF) • 100% Avalanche Tested • RoHS compliant Description This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. D G D S TO-3PN G MOSFET Maximum Ratings TC = 25oC unless otherwise noted.
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